IRGP4640PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRGP4640PbF
IRGP4640-EPbF
V_CES = 600V
I_C = 40A, T_C = 100°C
INSULATED GATE BIPOLAR TRANSISTOR
C
C
C
t_SC ≥ 5µs, T_J(max) = 175°C
V_CE(on) typ. = 1.60V @ I_C = 24A
Applications
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
GC ^E
TO-247AC
IRGP4640PbF
C
Collector
GC ^E
TO-247AD
IRGP4640-EP
E
Emitter
Features
Low V_CE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V_{CE (ON)} Temperature Coefficient
5µs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4640PbF
IRGP4640-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4640PbF
IRGP4640-EPbF
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
c Pulse Collector Current, V_GE = 15V
d Clamped Inductive Load Current, V_GE = 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_{ST G}
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
e Junction-to-Case
R_θCS
Case-to-Sink (flat, greased surface)
R_θJA
Junction-to-Ambient (typical socket mount)
Max.
600
65
40
72
96
±20
±30
250
125
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.60
–––
40
Units
V
A
V
W
°C
Units
°C/W
1
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October 29, 2013