|
IRGP450UD2 Datasheet, PDF (1/2 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V, Ic=33A) | |||
|
Previous Datasheet
Index
Next Data Sheet
Preliminary Data Sheet PD - 9.1065
IRGP450UD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
C
⢠Switching-loss rating includes all "tail" losses
⢠HEXFREDTM soft ultrafast diodes
⢠Optimized for high operating frequency (over 5kHz)
G
E
n-channel
UltraFast CoPack IGBT
VCES = 500V
VCE(sat) ⤠3.2V
@VGE = 15V, IC = 33A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-649
TO-247AC
Max.
500
59
33
120
120
29
120
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfâ¢in (1.1 Nâ¢m)
Units
V
A
V
W
°C
Min.
â
â
â
â
â
Typ.
â
â
0.24
â
6 (0.21)
Max.
0.64
0.83
â
40
â
Units
°C/W
g (oz)
Revision 1
To Order
|
▷ |