IRGP430UD2 Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

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PD - 9.1063
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP430UD2
UltraFast CoPack IGBT
Features
• Switching-loss rating includes all "tail" losses
• HEXFRED^TM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
V_CES = 500V
V_CE(sat) ≤ 3.0V
@V_GE = 15V, I_C = 15A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-633
TO-247AC
Max.
500
25
15
50
50
12
50
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
1.2
2.5
—
40
—
Units
°C/W
g (oz)
Revision 1
To Order