IRGP4266PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Insulated Gate Bipolar Transistor

IRGP4266PbF
IRGP4266-EPbF
V_CES = 650V
I_C = 90A, T_C =100°C
Insulated Gate Bipolar Transistor
C
t_SC 5.5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.7V @ IC = 75A
Applications
 Industrial Motor Drive
 Inverters
 UPS
 Welding
G
E
n-channel
G
Gate
GCE
IRGP4266PbF
TO-247AC
C
Collector
E
GC
IRGP4266-EPbF
TO-247AD
E
Emitter
Features
Low V_CE(ON) and switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V_{CE (ON)} Temperature Coefficient
5.5µs short circuit SOA
Lead-Free, RoHS compliant

Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4266PbF
IRGP4266-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4266PbF
IRGP4266-EPbF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C
Continuous Collector Current
I_C @ T_C = 100°C
I_CM
Continuous Collector Current
Pulse Collector Current, V_GE=20V
I_LM
Clamped Inductive Load Current, V_GE=20V 
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C
Maximum Power Dissipation
P_D @ T_C = 100°C
T_J
T_STG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
140
90
300
300
±20
455
230
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R_JC
R_CS
R_JA
Thermal Resistance Junction-to-Case 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.33
–––
–––
Units
°C/W
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August 22, 2014