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| IRGP4263PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Insulated Gate Bipolar Transistor | |||
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IRGP4263PbF
IRGP4263-EPbF
VCES = 650V
Insulated Gate Bipolar Transistor
C
IC = 60A, TC =100°C
tSC ï³ï 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
⢠Industrial Motor Drive
⢠Inverters
⢠UPS
⢠Welding
G
E
n-channel
G
Gate
E
GC
IRGP4263PbF
TO247AC
C
Collector
E
GC
IRGP4263-EPbF
TO-247AD
E
Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5µs short circuit SOA
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRG7P4263PbF
IRG7P4263-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4263PbF
IRGP4263-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current, VGE=20V
ILM
Clamped Inductive Load Current, VGE=20V ï
VGE
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
192
192
±20
300
150
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
Rï±JC (IGBT)
Rï±CS
Rï±JA
Thermal Resistance Junction-to-Case-(each IGBT) ï
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
âââ
âââ
âââ
Typ.
âââ
0.24
40
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Max.
0.5
âââ
âââ
Units
°C/W
August 21, 2014
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