IRGP4078DPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Low Switching Losses

IRGP4078DPbF
IRGP4078D-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
C
Features
• Low V_{CE (ON)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for I_LM
• Positive V_{CE (ON)} Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
G
E
n-channel
C
V_CES = 600V
I_C = 50A, T_C =100°C
T_J(MAX) = 175°C
V_CE(ON) typ. = 1.9V
C
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V_CE(ON), Low Switching Losses
and Ultra-low V_F
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
GC ^E
IRGP4078DPbF
TO-247AC
GC ^E
IRGP4078D-EP
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
IRGP4078DPbF
IRGP4078D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4078DPbF
IRGP4078D-EPbF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
Pulse Collector Current, V_GE = 15V
I_LM
Clamped Inductive Load Current, V_GE = 20V 
I_F @ T_C = 25°C Diode Continuous Forward Current
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FSM @ T_C = 25°C Diode Non Repetitive Peak Surge Current @ T_J = 25°C
I_FRM @Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs 
V_GE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
74
50
150
200
44
25
120
79
±20
±30
278
139
-55 to +175
300
(0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
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July 17, 2014