 English |
|
|
|
|
|
|
|
| IRGP4069PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
| |||
|
PD - 97426
INSULATED GATE BIPOLAR TRANSISTOR
Features
⢠Low VCE (ON) Trench IGBT Technology
⢠Low Switching Losses
⢠Maximum Junction Temperature 175 °C
⢠5 μS short circuit SOA
⢠Square RBSOA
⢠100% of The Parts Tested for ILM
⢠Positive VCE (ON) Temperature Coefficient
⢠Tight Parameter Distribution
⢠Lead Free Package
IRGP4069PbF
IRGP4069-EPbF
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 35A
tSC ⥠5μs, TJ(max) = 175°C
VCE(on) typ. = 1.6V
Benefits
⢠High Efficiency in a Wide Range of Applications
⢠Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
⢠Rugged Transient Performance for Increased Reliability
⢠Excellent Current Sharing in Parallel Operation
C
C
GC E
TO-247AC
IRGP4069PbF
GC E
TO-247AD
IRGP4069-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
c Clamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
f Thermal Resistance Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
76
50
35
105
140
±20
±30
268
134
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
âââ
âââ
âââ
Typ.
âââ
0.24
âââ
Max.
0.56
âââ
40
Units
V
A
V
W
°C
Units
°C/W
1
www.irf.com
10/02/09
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese