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| IRGP4063D1PBF Datasheet, PDF (1/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |||
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IRGP4063D1PbF
IRGP4063D1-EPbF
VCES = 600V
IC = 60A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
G
G
tSC ï³ï 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 48A
Applica ons
⢠Industrial Motor Drive
⢠Inverters
⢠UPS
⢠Welding
G
E
n-channel
G
Gate
E
C
G
IRGP4063D1PbF
C
Collector
E
C
G
IRGP4063D1âEPbF
E
Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5µs short circuit SOA
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4063D1PbF
IRGP4063D1-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4063D1PbF
IRGP4063D1-EPbF
Absolute Maximum Ratings
Parameter
Max.
VCES
Collector-to-Emitter Voltage
600
IC @ TC = 25°C
Continuous Collector Current
100
IC @ TC = 100°C Continuous Collector Current
60
ICM
Pulse Collector Current, VGE = 15V
200
ILM
Clamped Inductive Load Current, VGE = 20V ï
192
IF @ TC = 25°C
Diode Continous Forward Current
30
IF @ TC = 100°C Diode Continous Forward Current
15
IFM
Diode Maximum Forward Current ï
120
VGE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
330
170
-40 to +175
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min. Typ.
Max.
Rï±JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ï
Rï±JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ï
Rï±CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
Rï±JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
âââ âââ
0.45
âââ âââ
2.4
âââ 0.24
âââ
âââ âââ
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
June 24, 2013
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