IRGP4063-EPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low V_{CE (ON)} Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for I_LM 
• Positive V_{CE (ON)} Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
IRGP4063PbF
IRGP4063-EPbF
C
G
E
n-channel
V_CES = 600V
I_C = 48A, T_C = 100°C
t_SC ≥ 5μs, T_J(max) = 175°C
V_CE(on) typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V_{CE (ON)} and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
C
GC ^E
TO-247AC
IRGP4063PbF
GC ^E
TO-247AD
IRGP4063-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE = 15V
c Clamped Inductive Load Current, V_GE = 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC (IGBT)
R_θCS
R_θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
96 h
48
144
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
V
A
A
V
W
°C
Units
°C/W
1
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06/30/09