IRGP4055PBF Datasheet, PDF (1/7 Pages) International Rectifier – PDP TRENCH IGBT

PDP TRENCH IGBT
PD - 97207
IRGP4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low V_CE(on) and Energy per Pulse (E_PULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
V_CE min
300
V
V_CE(ON) typ. @ 110A
1.70
V
I_RP max @ T_C= 25°C c
270
A
T_J max
150
°C
C
C
G
E
n-channel
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V_CE(on) and low E_PULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case d
R_θCS
Case-to-Sink (flat, greased surface)
R_θJA
Junction-to-Ambient (typical socket mount)
Max.
±30
110
60
270
255
102
2.04
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
0.24
–––
Max.
0.48
–––
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
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1
05/10/06