IRGP4055DPBF Datasheet, PDF (1/7 Pages) International Rectifier – PDP TRENCH IGBT

PD - 97222
PDP TRENCH IGBT ^IRGP4055DPbF
Features
Key Parameters
l Advanced Trench IGBT Technology
V_CE min
300
V
l Optimized for Sustain and Energy Recovery
V_CE(ON) typ. @ 110A
1.70
V
circuits in PDP applications
I_RP max @ T_C= 25°C c
270
A
l Low V_CE(on) and Energy per Pulse (E_PULSETM)
T_J max
150
°C
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
C
C
G
E
n-channel
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low V_CE(on) and low E_PULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
R_θCS
R_θJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT) d
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
±30
110
60
270
255
102
2.04
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
1.45
0.20
–––
2.0 (0.07)
Max.
0.48
2.5
–––
70
–––
Units
V
A
W
W/°C
°C
N
Units
°C/W
g (oz)
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1
06/14/06