IRGP4050 Datasheet, PDF (1/8 Pages) International Rectifier – PDP Switch

PD-95882
PDP Switch
IRGP4050
Features
§ Key parameters optimized for PDP sustain &
Energy recovery applications
§ 104A continuous collector current
rating reduces component count
§ High pulse current rating makes it ideal for
capacitive load circuits
§ Low temperature co-efficient of V_{CE (ON)} ensures
reduced power dissipation at operating junction
temperatures
§ Reverse voltage avalanche rating improves the
robustness in sustain driver application
§ Short fall & rise times for fast switching
C
G
E
n-channel
Description
This IGBT is specifically designed for sustain & energy recovery application
in plasma display panels. This IGBT features low V_{CE (ON)} and fast switching
times to improve circuit efficiency and reliability. Low temperature co-efficient
of V_{CE (ON)} makes this IGBT an ideal device for PDP sustain driver application.
V_CES = 250V
V_{CE(on) typ.} = 1.64V
@V_GE = 15V, I_C = 30A
TO-247AC
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
Ù Pulse Collector Current
d Clamped Inductive Load current
V_GE
E_ARV
e ^{Gate-to-Emitter Voltage}
Reverse Voltage Avalanche Energy
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Solder Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
R_θJC
Junction-to-Case- IGBT
Rθ_CS
Case-to-Sink, flat, greased surface
R_θJA
Junction-to-Ambient, typical socket mount
Wt
Weight
*Package limited to 60A.
1
Max.
250
104*
56
208
290
±20
1240
330
130
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.38
–––
40
–––
Units
°C/W
g (oz.)
www.irf.com
07/05/04