IRGP30B60KD-EP Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 95120A
IRGP30B60KD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (on)} Non Punch Through IGBT Technology.
• Low Diode V_F.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive V_{CE (on)} Temperature Coefficient.
• TO-247AD Package
• Lead-Free
C
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
V_CES = 600V
I_C = 30A, T_C=100°C
t_sc > 10µs, T_J=150°C
V_CE(on) typ. = 1.95V
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
TO-247AD
Max.
600
60
30
120
120
60
30
120
±20
304
122
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Min.
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Typ.
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0.24
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6.0
Max.
0.41
1.32
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40
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Units
°C/W
g
1
02/27/06