IRGP30B120KD-E Datasheet, PDF (1/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD- 93818
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP30B120KD-E
Motor Control Co-Pack IGBT
Features
• Low V_CE(on) Non Punch Through (NPT)
Technology
• Low Diode V_F (1.76V Typical @ 25A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive V_CE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
C
G
E
N-channel
V_CES = 1200V
V_{CE(on) typ.} = 2.28V
V_GE = 15V, I_C = 25A, 25°C
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
TO-247AD
Max.
1200
60
30
120
120
30
120
± 20
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
W_t
Z_θJC
www.irf.com
Parameter
Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount
–––
Weight
–––
Transient Thermal Impedance Junction-to-Case (Fig.24)
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1
12/14/99