IRGP20B120U-EP Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast Non Punch Through (NPT)
Technology
• 10 µs Short Circuit capability
• Square RBSOA
• Positive V_CE(on) Temperature Coefficient
• Extended lead TO-247 package
• Lead-Free
Benefits
• Benchmark efficiency above 20KHz
• Optimized for Welding, UPS, and Induction Heating
applications
• Rugged with UltraFast performance
• Low EMI
• Significantly Less Snubber required
• Excellent Current sharing in Parallel operation
• Longer leads for easier mounting
PD- 95897
IRGP20B120U-EP
C
G
E
n-channel
UltraFast IGBT
V_CES = 1200V
V_{CE(on) typ.} = 3.05V
V_GE = 15V, I_C = 20A, 25°C
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_AS @ T_C =25°C
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Gate-to-Emitter Voltage
Avalanche Energy, single pulse
I_C = 25A, V_CC = 50V, R_GE = 25ohm
L = 200µH (Fig. CT.6)
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
TO-247AD
Max.
1200
40
20
120
120
± 20
65
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.42
–––
40
Wt
Z_θJC
www.irf.com
Weight
–––
Transient Thermal Impedance Junction-to-Case (Fig.18)
6 (0.21)
–––
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
09/14/04