IRGMVC50U Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE

PD -90825A
IRGMVC50U
INSULATED GATE BIPOLAR TRANSISTOR
WITH ON-BOARD REVERSE DIODE
Ultra Fast Speed IGBT
Features
C
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Ultra Fast operation > 10 kHz
G
• Switching-loss rating includes all "tail" losses
• Ceramic Eyelets
E
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
V_CES = 600V
V_{CE(on) max} = 3.0V
@V_GE = 15V, I_C = 27A
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f_Ic/2, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
*Current is limited by pin diameter
Thermal Resistance
TO-258AA
Max.
600
45*
27
220
180
±20
200
80
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
Units
V
A
V
W
°C
g
RthJC
RthJC
RthCS
RthJA
Parameter
Junction-to-Case-IGBT
Junction-to-Case-Diode
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
— — 0.625
— — 1.0
°C/W
— 0.21 —
— — 30
Test Conditions
For footnotes refer to the last page
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1
02/20/02