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| IRGIB7B60KDPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
⢠Low VCE (on) Non Punch Through IGBT Technology.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Positive VCE (on) Temperature Coefficient.
⢠Maximum Junction Temperature rated at 175°C.
⢠Lead-Free
G
E
n-channel
VCES = 600V
IC = 8.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
⢠Benchmark Efficiency for Motor Control.
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current (Ref.Fig.C.T.5)
ILM
Clamped Inductive Load current Q
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC
Junction-to-Case- IGBT
RθJC
RθCS
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
RθJA
Junction-to-Ambient, typical socket mount
Wt
Weight
www.irf.com
Max.
600
12
8.0
24
24
9.0
6.0
18
2500
±20
39
20
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
2.0
Max.
3.8
6.0
âââ
62
âââ
Units
°C/W
g
1
04/27/04
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