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| IRGIB6B60KD116P Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD-94427D
IRGIB6B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
⢠Low VCE (on) Non Punch Through IGBT Technology.
⢠Low Diode VF.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Ultrasoft Diode Reverse Recovery Characteristics.
⢠Positive VCE (on) Temperature Coefficient.
G
E
n-channel
IC = 6.0A, TC=90°C
tsc > 10µs, TJ=175°C
VCE(on) typ. = 1.8V
Benefits
⢠Benchmark Efficiency for Motor Control.
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
ILM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC
Junction-to-Case- IGBT
RθJC
Junction-to-Case- Diode
RθCS
Case-to-Sink, flat, greased surface
RθJA
Junction-to-Ambient, typical socket mount
Wt
Weight
www.irf.com
TO-220
Full-Pak
Max.
600
11
7.0
22
22
9.0
6.0
18
2500
±20
38
19
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
2.0
Max.
3.9
6.0
âââ
62
âââ
Units
°C/W
g
1
4/14/04
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