IRGIB15B60KD1P_15 Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD- 94914
IRGIB15B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
V_CES = 600V
I_C = 12A, T_C=100°C
t_sc > 10µs, T_J=150°C
V_CE(on) typ. = 1.80V
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
I_LM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
I_F @ T_C = 25°C Diode Continuous Forward Current
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
V_ISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
R_θJC
Junction-to-Case- IGBT
R_θJC
Junction-to-Case- Diode
R_θCS
Case-to-Sink, flat, greased surface
R_θJA
Junction-to-Ambient, typical socket mount
Wt
Weight
www.irf.com
TO-220
Full-Pak
Max.
600
19
12
38
38
19
12
38
2500
±20
52
26
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
2.9
4.6
–––
62
–––
Units
°C/W
g
1
12/30/03