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IRGI4060DPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE | |||
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
⢠Low VCE (on) Trench IGBT Technology
⢠Low Switching Losses
⢠5μs SCSOA
⢠Square RBSOA
⢠100% of The Parts Tested for ILM Â
⢠Positive VCE (on) Temperature Coefficient.
⢠Ultra Fast Soft Recovery Co-pak Diode
⢠Tighter Distribution of Parameters
⢠Lead-Free Package
Benefits
⢠High Efficiency in a Wide Range of Applications
⢠Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
⢠Rugged Transient Performance for Increased Reliability
⢠Excellent Current Sharing in Parallel Operation
⢠Low EMI
PD - 97153
IRGI4060DPbF
C
G
E
n-channel
VCES = 600V
IC = 7.5A, TC = 100°C
tsc > 5µs, Tjmax = 150°C
VCE(on) typ. = 1.50V
C
G
Gate
CE
G
TO-220AB
Full-Pak
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
PD @ TC =25°C
PD @ TC =100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
c Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
d Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθJC
e Parameter
Junction-to-Case - IGBT
e Junction-to-Case - Diode
RθCS
RθJA
e Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Wt
Weight
1
Max.
600
14
7.5
23
30
14
7.5
30
± 20
± 30
37
15
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
â
â
â
â
â
Typ.
â
â
0.5
â
2.0
Max.
3.40
6.10
â
65
â
Units
V
A
V
W
°C
Units
°C/W
g
www.irf.com
4/17/09
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