IRGI4045DPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for I_LM
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 97154
IRGI4045DPbF
C
G
E
n-channel
V_CES = 600V
I_C = 6.0A, T_C = 100°C
t_sc > 5µs, T_jmax = 150°C
V_{CE(on) typ.} = 1.70V
C
G
Gate
CE
G
TO-220AB
Full-Pak
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C@ T_C = 25°C
I_C@ T_C = 100°C
I_CM
I_LM
I_F@T_C=25°C
I_F@T_C=100°C
I_FM
V_GE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE=15V
Clamped Inductive Load Current, V_GE=20V c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C =25°C
P_D @ T_C =100°C
T_J
T_STG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
R_θJC
R_θCS
R_θJA
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Wt
Weight
1
Max.
600
11
6
18
24
11
6
24
± 20
± 30
33
13
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.5
—
2.0
Max.
3.76
9.00
—
65
—
Units
°C/W
g
www.irf.com
5/22/09