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IRGB4B60KD1PBF Datasheet, PDF (1/15 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
⢠Low VCE (on) Non Punch Through IGBT Technology.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Positive VCE (on) Temperature Coefficient.
⢠Maximum Junction Temperature rated at 175°C.
⢠TO-220 is available in PbF as Lead-Free
G
E
n-channel
PD - 95616
IRGB4B60KD1PbF
IRGS4B60KD1
IRGSL4B60KD1
VCES = 600V
IC = 7.6A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
Benefits
⢠Benchmark Efficiency for Motor Control.
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
TO-220
D2Pak
TO-262
IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
ILM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
600
V
11
7.6
A
22
22
11
6.7
22
±20
V
63
W
31
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Min.
Typ.
Max. Units
RθJC
Junction-to-Case- IGBT
âââ
âââ
2.4
°C/W
RθJC
Junction-to-Case- Diode
âââ
âââ
6.1
RθCS
Case-to-Sink, flat, greased surface
âââ
0.50
âââ
RθJA
Junction-to-Ambient
âââ
âââ
62
RθJA
d Junction-to-Ambient (PCB Mount, steady state)
âââ
âââ
40
Wt
Weight
âââ
1.44
âââ
g
www.irf.com
1
8/10/04
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