IRGB4B60K Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94633A
IRGB4B60K
IRGS4B60K
IRGSL4B60K
V_CES = 600V
I_C = 6.8A, T_C=100°C
t_sc > 10µs, T_J=150°C
V_CE(on) typ. = 2.1V
TO-220
IRGB4B60K
D²Pak
IRGS4B60K
TO-262
IRGSL4B60K
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
I_LM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
R_θJC
Junction-to-Case- IGBT
R_θCS
Case-to-Sink, flat, greased surface
R_θJA
Junction-to-Ambient
R_θJA
d Junction-to-Ambient (PCB Mount, steady state)
Wt
Weight
www.irf.com
Max.
600
12
6.8
24
24
±20
63
31
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
2.4
–––
62
40
–––
Units
°C/W
g
1
8/4/03