IRGB4065PBF Datasheet, PDF (1/9 Pages) International Rectifier – PDP TRENCH IGBT

PDP TRENCH IGBT
PD - 97059B
IRGB4065PbF
IRGS4065PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
Key Parameters
circuits in PDP applications
V_CE min
300
V
l Low V_CE(on) and Energy per Pulse (E_PULSETM) ^VCE(ON) ^{typ. @ I}C ^{= 70A}
1.75
V
for improved panel efficiency
I_RP max @ T_C= 25°C c
205
A
l High repetitive peak current capability
l Lead Free package
T_J max
150
°C
C
C
C
G
E
n-channel
E
C
G
TO-220
IRGB4065DPbF
CE
G
D²Pak
IRGS4065DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V_CE(on) and low E_PULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
d Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
d Junction-to-Ambient, TO-220
d Junction-to-Ambient (PCB Mount) , D²Pak
www.irf.com
Max.
±30
70
40
205
178
71
1.4
-40 to + 150
300
x x 10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.70
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/05/06