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IRGB4059DPBF Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for 4X Rated Current (ILM)
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-toSink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Weight
PD - 97072A
IRGB4059DPbF
C
G
E
n-channel
C
VCES = 600V
IC = 4.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.75V
G
Gate
E
C
G
TO-220AB
C
Collector
E
Emitter
Max.
600
8
4
16
16
8
4
16
± 20
± 30
56
28
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
Typ.
0.5
80
1.44
Max.
2.70
6.30
Units
°C/W
g
1
www.irf.com
4/14/06
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