IRGB4045DPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Low Switching Losses

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for I_LM
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 97269A
IRGB4045DPbF
C
G
E
n-channel
C
V_CES = 600V
I_C = 6.0A, T_C = 100°C
t_sc > 5µs, T_jmax = 175°C
V_{CE(on) typ.} = 1.7V
G
Gate
E
C
G
TO-220AB
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C@ T_C = 25°C
I_C@ T_C = 100°C
I_CM
I_LM
I_F@T_C=25°C
I_F@T_C=100°C
I_FM
V_GE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
c ^{Pulsed Collector Current, VGE = 15V}
Clamped Inductive Load Current, V_GE = 20V
Diode Continuous Forward Current
d ^{Diode Continuous Forward Current}
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C =25°
P_D @ T_C =100°
T_J
T_STG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
e ^Parameter
Junction-to-Case - IGBT
e Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
e Junction-to-Ambient, typical socket mount
1
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
—
—
—
—
Typ.
—
—
0.5
—
Max.
1.94
6.30
—
62
Units
°C/W
www.irf.com
01/28/2010