IRG8P08N120KDPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRG8B08N120KDPbF
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
V_CES = 1200V
I_C = 8A, T_C =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
t_SC 10µs, T_J(max) = 150°C
V_CE(ON) typ. = 1.7V @ I_C = 5A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low V_CE(ON)
10μs Short Circuit SOA
Positive V_CE(ON) Temperature Coefficient
Square RBSOA and high I_LM- rating
Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB
IRG8B08N120KDPbF
GCE
TO-247AC
IRG8P08N120KDPbF
GC ^E
TO-247AD
IRG8P08N120KD-EPbF
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Package Type
TO-247AC
TO-247AD
TO-220AB
Standard Pack
Form
Quantity
Tube
25
Tube
25
Tube
50
Orderable Part Number
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
V_GE
I_FM
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Diode Maximum Forward Current 
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
15
8
15
20
11
6
±30
20
89
36
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R_JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
R_JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
R_JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247
R_JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247
R_CS
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB
R_JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB
R_CS
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247
R_JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247
Typ.
–––
–––
–––
–––
0.50
–––
0.24
–––
Max.
1.3
2.6
1.4
2.6
–––
62
–––
40
Units
V
A
V
W
C
Units
°C/W
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December 12, 2014