IRG7RA13UPBF Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Trench IGBT Technology

PDP TRENCH IGBT
IRG7RA13UPbF
Features
 Advanced Trench IGBT Technology
 Optimized for Sustain and Energy Recovery
circuits in PDP applications
 Low V_CE(on) and Energy per Pulse (E_PULSETM)
for improved panel efficiency
 High repetitive peak current capability
 Lead Free package
Description
This IGBT is specifically designed for applications in
Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V_CE(on) and low
E_PULSE^TM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction
temperature and high repetitive peak current capability.
These features combine to make this IGBT a highly
efficient, robust and reliable device for PDP applications.
Key Parameters
V_CE min
360
V
V_CE(ON) typ. @ I_C = 20A
1.42
V
I_RP max @ T_C= 25°C
276
A
T_J max
150
°C
C
C
G
E
n-channel
G
Gate
C
Collector
E
G
D-Pak
E
Emitter
Ordering Information
Base part number
IRG7RA13UPbF
Package Type
D-Pak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Complete Part Number
IRG7RA13UPbF
IRG7RA13UTRPbF
IRG7RA13UTRLPbF
IRG7RA13UTRRPbF
Absolute Maximum Ratings
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Parameter
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
Repetitive Peak Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
R_JC
Junction-to-Case 
R_JA
Junction-to-Ambient (PCB Mount) 
Max.
±30
40
20
276
78
31
0.63
-40 to + 150
300
Typ.
–––
—
Max.
1.6
50
Units
V
A
W
W/°C
°C
Units
°C/W
1 www.irf.com © 2012 International Rectifier
November 5^th, 2012