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| IRG7PSH73K10PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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INSULATED GATE BIPOLAR TRANSISTOR
Features
⢠Low VCE (ON) Trench IGBT Technology
⢠Low Switching Losses
⢠Maximum Junction Temperature 175 °C
⢠10 μS short Circuit SOA
⢠Square RBSOA
⢠100% of The Parts Tested for ILM
⢠Positive VCE (ON) Temperature Coefficient
⢠Tight Parameter Distribution
⢠Lead Free Package
Benefits
⢠High Efficiency in a Wide Range of Applications
⢠Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
⢠Rugged Transient Performance for Increased Reliability
⢠Excellent Current Sharing in Parallel Operation
PD - 97406A
IRG7PSH73K10PbF
C
G
E
n-channel
VCES = 1200V
IC(Nominal) = 75A
tSC ⥠10μs, TJ(max) =175°C
VCE(on) typ. = 2.0V
G
G ate
C
E
C
G
Super-247
C
C ollector
E
E m itter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
ICM
ILM
VGE
Nominal Current
Pulse Collector Current, VGE=15V
d Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
TJ
Maximum Power Dissipation
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
Parameter
g Thermal Resistance Junction-to-Case-(each IGBT)
g Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
220c
130
75
225
300
±30
1150
580
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
âââ
âââ
âââ
Typ.
âââ
0.24
40
Max.
0.13
âââ
âââ
Units
V
A
V
W
°C
Units
°C/W
1
www.irf.com
9/8/10
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