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| IRG7PSH54K10DPBF Datasheet, PDF (1/11 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |||
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IRG7PSH54K10DPbF
VCES = 1200V
IC = 65A, TC =100°C
tSC ï³ï 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 50A
Applications
⢠Industrial Motor Drive
⢠UPS
⢠Solar Inverters
⢠Welding
Features
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
G
E
n-channel
G
Gate
C
Collector
E
C
G
IRG7PSH54K10DPbF
E
Emitter
Benefits
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
IRG7PSH54K10DPbF
Package Type
Super-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRG7PSH54K10DPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V ï
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
120
65
200
200
50
25
±30
520
210
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
Rï±JC (IGBT)
Rï±JC (Diode)
Rï±CS
Rï±JA
Thermal Resistance Junction-to-Case-(each IGBT) ï
Thermal Resistance Junction-to-Case-(each Diode) ï
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
1 www.irf.com © 2013 International Rectifier
Max.
0.24
0.70
âââ
40
Units
°C/W
April 16, 2013
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