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IRG7PH46UPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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INSULATED GATE BIPOLAR TRANSISTOR
Features
⢠Low VCE (ON) trench IGBT technology
⢠Low switching losses
⢠Maximum junction temperature 175 °C
⢠Square RBSOA
⢠100% of the parts tested for ILM
⢠Positive VCE (ON) temperature co-efficient
⢠Tight parameter distribution
⢠Lead -Free
Benefits
⢠High efficiency in a wide range of applications
⢠Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
⢠Rugged transient performance for increased reliability
⢠Excellent current sharing in parallel operation
Applications
⢠U.P.S
⢠Welding
⢠Solar inverter
⢠Induction heating
C
G
E
n-channel
PD - 96305A
IRG7PH46UPbF
IRG7PH46U-EP
VCES = 1200V
IC = 75A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
C
C
E
C
G
TO-247AC
IRG7PH46UPbF
E
C
G
TO-247AD
IRG7PH46U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOM INA L
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Collector-to-Emitter Voltage
Parameter
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, VGE = 20V
c Clamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
f Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
g 130
75
40
160
160
±30
469
234
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
Typ.
âââ
âââ
âââ
0.24
âââ
40
Max.
0.32
âââ
âââ
Units
V
A
V
W
°C
Units
°C/W
1
www.irf.com
07/27/12
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