IRG7PH42UD1PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Device optimized for induction heating and soft switching applications

IRG7PH42UD1PbF
IRG7PH42UD1-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low V_{CE (ON)} trench IGBT technology
• Low switching losses
• Square RBSOA
• Ultra-low V_F Diode
• 1300Vpk repetitive transient capacity
• 100% of the parts tested for I_LM 
• Positive V_{CE (ON)} temperature co-efficient
• Tight parameter distribution
• Lead free package
C
G
E
n-channel
G
V_CES = 1200V
I _NOMINAL = 30A
T_J(max) = 150°C
V_CE(on) typ. = 1.7V
G
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V_CE(on), low switching losses
and Ultra-low V_F
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
E
C
G
TO-247AC
IRG7PH42UD1PbF
E
C
G
TO-247AD
IRG7PH42UD1-EP
G
Gate
C
Collector
E
Emitter
Base part number
IRG7PH42UD1PbF
IRG7PH42UD1-EP
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Tube
Quantity
25
25
Orderable Part Number
IRG7PH42UD1PbF
IRG7PH42UD1-EP
Absolute Maximum Ratings
Parameter
V_CES
V(BR) Transient
Collector-to-Emitter Voltage
i Repetitive Transient Collector-to-Emitter Voltage
I_C @ T_C = 25°C
Continuous Collector Current
I_C @ T_C = 100°C
Continuous Collector Current
I_{N OMI N AL}
I_CM
I_LM
Nominal Current
dh Pulse Collector Current, V_GE=15V
c Clamped Inductive Load Current, V_GE=20V
I_F @ T_C = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IF R M
Diode Continous Forward Current
d Diode Repetitive Peak Forward Current
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C
Maximum Power Dissipation
P_D @ T_C = 100°C
Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
1300
g 85
45
30
200
120
70
35
120
±30
313
125
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.4
1.05
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1
www.irf.com © 2013 International Rectifier
April 24, 2013