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IRG7PH42UD1PBF Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | |||
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PD - 97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
⢠Low VCE (ON) trench IGBT technology
⢠Low switching losses
⢠Square RBSOA
⢠Ultra-low VF Diode
⢠1300Vpk repetitive transient capacity
⢠100% of the parts tested for ILM Â
⢠Positive VCE (ON) temperature co-efficient
⢠Tight parameter distribution
⢠Lead free package
C
G
E
n-channel
IRG7PH42UD1PbF
IRG7PH42UD1-EP
VCES = 1200V
I NOMINAL = 30A
TJ(max) = 150°C
VCE(on) typ. = 1.7V
Benefits
⢠Device optimized for induction heating and soft switching
applications
⢠High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
⢠Rugged transient performance for increased reliability
⢠Excellent current sharing in parallel operation
⢠Low EMI
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
h Pulse Collector Current, VGE=15V
c Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
d Diode Repetitive Peak Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
C
C
GC E
TO-247AC
IRG7PH42UD1PbF
GC E
TO-247AD
IRG7PH42UD1-EP
G
Gate
C
Collector
E
Emitter
Max.
1200
85g
45
30
90
120
70
35
120
±30
313
125
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
40
Max.
0.4
1.05
âââ
âââ
Units
°C/W
www.irf.com
3/26/10
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