IRG7PH35UD1PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Low Switching Losses

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH35UD1PbF
IRG7PH35UD1-EP
Features
• Low V_{CE (ON)} trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low V_F Diode
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for I_LM
• Positive V_{CE (ON)} Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V_CE(on), low switching losses
and Ultra-low V_F
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
C
G
E
n-channel
V_CES = 1200V
I _NOMINAL = 20A
T_J(max) = 150°C
V_CE(on) typ. = 1.9V
G
G
E
C
G
E
C
G
TO-247AC
IRG7PH35UD1PbF
TO-247AD
IRG7PH35UD1-EP
G
Gate
C
Collector
E
Emitter
Base part number
IRG7PH35UD1PbF
IRG7PH35UD1-EP
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Tube
Tube
Quantity
25
25
Orderable Part Number
IRG7PH35UD1PbF
IRG7PH35UD1-EP
Absolute Maximum Ratings
VCES
V(BR) Transient
I_C @ T_C = 25°C
IC @ TC = 100°C
I_NOMINAL
ICM
I_LM
IF @ TC = 25°C
I_F @ T_C = 100°C
IFM
V_GE
PD @ TC = 25°C
P_D @ T_C = 100°C
TJ
T_STG
Parameter
Collector-to-Emitter Voltage
h Repetitive Transient Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
dg Pulse Collector Current, V_GE=15V
c Clamped Inductive Load Current, V_GE=20V
Diode Continous Forward Current
Diode Continous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_θJ A
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
1300
50
25
20
150
80
50
25
80
±30
179
71
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.35
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1
www.irf.com © 2013 International Rectifier
April 24, 2013