IRG7PH35UD1PBF Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

PD - 97455
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low V_{CE (ON)} trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low V_F Diode
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for I_LM
• Positive V_{CE (ON)} Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
C
G
E
n-channel
IRG7PH35UD1PbF
IRG7PH35UD1-EP
V_CES = 1200V
I _NOMINAL = 20A
T_J(max) = 150°C
V_CE(on) typ. = 1.9V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V_CE(on), low switching losses
and Ultra-low V_F
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_NOMINAL
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
f Pulse Collector Current, V_GE=15V
c Clamped Inductive Load Current, V_GE=20V
Diode Continous Forward Current
Diode Continous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Rθ_JC (IGBT)
R_θJC (Diode)
Parameter
g Thermal Resistance Junction-to-Case-(each IGBT)
g Thermal Resistance Junction-to-Case-(each Diode)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
Rθ_JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
C
C
GC ^E
TO-247AC
IRG7PH35UD1PbF
GC ^E
TO-247AD
IRG7PH35UD1-EP
G
Gate
C
Collector
E
Emitter
Max.
1200
50
25
20
60
80
50
25
80
±30
179
71
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.35
–––
–––
Units
°C/W
www.irf.com
02/09/2010