IRG7PH35UD1MPBF Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
C
• Low V_{CE (ON)} trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low V_F Diode
• 1300Vpk Repetitive Transient Capacity
G
• 100% of the Parts Tested for I_LM
• Positive V_{CE (ON)} Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
E
n-channel
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V_CE(on), low switching losses
and Ultra-low V_F
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
IRG7PH35UD1MPbF
V_CES = 1200V
I_C = 25A, T_C = 100°C
T_J(max) = 150°C
V_CE(on) typ. = 1.9V @ I_C = 20A
C
GC ^E
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
IRG7PH35UD1MPbF
Package Type
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Orderable part number
IRG7PH35UD1MPbF
Absolute Maximum Ratings
V _{C ES}
V_{(B R )T r ansient}
Parameter
Collector-to-Emitter Voltage
h Repetitive Transient Collector-to-Emitter Voltage
I_C @ T_C = 25°C
Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
dg Pulse Collector Current, VGE=15V
c Clamped Inductive Load Current, V_GE=20V
I_F @ T_C = 25°C
Diode Continous Forward Current
I_F @ T_C = 100°C
I_{F M}
Diode Continous Forward Current
d Diode Maximum Forward Current
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C
Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
R_θCS
R_θJA
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
1300
50
25
150
80
50
25
80
±30
179
71
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
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–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.35
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–––
Units
V
A
V
W
°C
Units
°C/W
1
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April 24, 2013