IRG7PH30K10PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 96156A
INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PbF
Features
• Low V_{CE (ON)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 µS short Circuit SOA
• Square RBSOA
• 100% of the parts tested for I_LM
• Positive V_{CE (ON)} Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
C
G
E
n-channel
V_CES = 1200V
I_C = 23A, T_C = 100°C
t_SC ≥ 10µs, T_J(max) =175°C
V_CE(on) typ. = 2.05V
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V_{CE (ON)} and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
G
Gate
E
C
G
TO-247AC
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_NOMINAL
I_CM
I_LM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current Vge = 15V
c Clamped Inductive Load Current Vge = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC (IGBT)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
Rθ_CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
Rθ_JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
33
23
9.0
27
36
±30
210
110
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.70
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1
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06/23/09