IRG7PG35UPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG7PG35UPbF
IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
 Low V_{CE (ON)} trench IGBT technology
 Low switching losses
 Square RBSOA
 100% of the parts tested for I_LM
 Positive V_{CE (ON)} temperature co-efficient
 Tight parameter distribution
 Lead-free package
C
G
E
n-channel
C
V_CES = 1000V
I_C = 35A, T_C = 100°C
T_J(MAX) = 175°C
V_CE(ON) typ. = 1.9V@ I_C = 20A
C
Benefits
 High efficiency in a wide range of applications
 Suitable for a wide range of switching frequencies due to low
V_CE(on) and low switching losses
 Rugged transient performance for increased reliability
 Excellent current sharing in parallel operation
Applications
 U.P.S.
 Welding
 Solar Inverter
 Induction heating
GCE
IRG7PG35UPbF
TO-247AC
GC ^E
IRG7PG35U-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG35UPbF
IRG7PG35U-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
IRG7PG35UPbF
25
IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current (Silicon Limited)
I_C @ T_C = 100°C Continuous Collector Current (Silicon Limited)
I_CM
Pulse Collector Current, V_GE = 15V 
I_LM
Clamped Inductive Load Current, V_GE = 20V 
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1000
55
35
60
80
±30
210
105
-55 to +175
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R_θJC (IGBT) Junction-to-Case (IGBT) 
R_θCS
Case-to-Sink (flat, greased surface)
R_θJA
Junction-to-Ambient (typical socket mount)
1 www.irf.com © 2014 International Rectifier
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.70
–––
40
Units
°C/W
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April 14, 2014