IRG6S330UPBF Datasheet, PDF (1/8 Pages) International Rectifier – PDP TRENCH IGBT

PDP TRENCH IGBT
PD - 96217A
IRG6S330UPbF
Features
l Advanced Trench IGBT Technology
Key Parameters
V_CE min
330
V
l Optimized for Sustain and Energy Recovery
V_CE(ON) typ. @ I_C = 70A
1.80
V
circuits in PDP applications
l Low V_CE(on) and Energy per Pulse (E_PULSETM)
for improved panel efficiency
I_RP max @ T_C= 25°C
T_J max
250
A
150
°C
l High repetitive peak current capability
l Lead Free package
C
G
E
n-channel
E
C
G
D²Pak
IRG6S330UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V_CE(on) and low E_PULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
R_θJC
d Junction-to-Case
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
300
Typ.
–––
Max.
0.8
Units
V
A
W
W/°C
°C
Units
°C/W
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09/11/09