IRG6B330UDPBF Datasheet, PDF (1/7 Pages) International Rectifier – PDP TRENCH IGBT

PD - 96304
IRG6B330UDPbF
PDP TRENCH IGBT
Features
l Advanced Trench IGBT Technology
Key Parameters
V_CE min
330
V
l Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
l Low V_CE(on) and Energy per Pulse (E_PULSETM)
for Improved Panel Efficiency
c ^{VCE(ON) typ. @ IC = 70A}
I_RP max @ T_C= 25°C
T_J max
1.69
250
150
V
A
°C
l High Repetitive Peak Current Capability
l Lead Free Package
C
G
E
n-channel
CE
G
TO-220AB
G
G ate
C
C ollector
E
Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V_CE(on) and low E_PULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
Rθ_CS
Rθ_JA
Parameter
d Thermal Resistance Junction-to-Case-(each IGBT)
d Thermal Resistance Junction-to-Case-(each Diode)
Case-to-Sink (flat, greased surface)
d Junction-to-Ambient (typical socket mount)
Weight
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
300
x x 10lb in (1.1N m)
Typ.
–––
1.6
0.24
–––
6.0 (0.21)
Max.
0.80
2.4
–––
40
–––
Units
V
A
W
W/°C
°C
N
Units
°C/W
g (oz)
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1
4/20/10