IRG4ZH70UD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 9.1627A
IRG4ZH70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Surface Mountable
UltraFast CoPack IGBT
Features
q UltraFast IGBT optimized for high switching frequencies
q IGBT co-packaged with HEXFRED™ ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations
q Low Gate Charge
q Low profile low inductance SMD-10 Package
q Separated control & Power-connections for
easy paralleling
q Inherently good coplanarity
q Easy solder inspection and cleaning
n-channel
G
E(k)
Benefits
q Highest power density and efficiency available
q HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
q IGBTs optimized for specific application conditions
q High input impedance requires low gate drive power
q Less noise and interference
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_θJC
R_θJC
R_θCS
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
—
—
—
—
C
V_CES = 1200V
V_{CE(ON)typ =} 2.23V
@V_GE = 15V, I_C = 42A
E
SMD-10
Max.
1200
78
42
312
312
42
312
± 20
350
140
-55 to + 150
Units
V
A
V
W
°C
Typ.
—
—
0.44
6.0(0.21)
Max.
0.36
0.69
—
—
Units
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
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