IRG4ZH50KD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 9.1680
IRG4ZH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable Short
ULTRAFAST SOFT RECOVERY DIODE
Circuit Rated UltraFast IGBT
Features
q High short circuit rating optimized for motor control, t_sc = 10µs,
V_CC = 720V, T_J = 125°C, V_GE = 15V
q IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft
recovery antiparallel diodes for use in bridge configurations
n-channel ^C
V_CES = 1200V
V_{CE(ON)typ =} 2.79V
q Combines low conduction losses with high switching speed
G
q Low profile low inductance SMD-10 Package
E(k)
q Separated control & Power-connections for easy paralleling
@V_GE = 15V, I_C = 29A
E
q Good coplanarity
q Easy solder inspection and cleaning
Benefits
q Highest power density and efficiency available
q HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
q High input impedance requires low gate drive power
q Less noise and interference
SMD-10
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
t_sc
Short Circuit Withstand Time
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Max.
1200
54
29
108
108
16
108
10
± 20
210
83
-55 to +150
Units
V
A
µs
V
W
°C
R_θJC
R_θJC
R_θCS
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
—
—
—
—
Typ.
—
—
0.44
6.0(0.21)
Max.
0.60
1.20
—
—
Units
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Notes:
ΠRepetitive rating: V_GE = 20V; pulse width limited by maximum
junction temperature (figure 20)
 V_CC = 80% (V_CES), V_GE = 20V, L = 10µH, R_G = 5.0Ω (figure 19)
Ž Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.
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