IRG4ZC71KD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 91723
PRELIMINARY _IRG4ZC71KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor
control, t_sc =10µs, V_CC = 360V , T_J = 125°C,
V_GE = 15V
• IGBT co-packaged with HEXFRED™ ultrafast,
ultra-soft-recovery antiparallel diodes for use in
bridge configurations
• Combines low conduction losses with high
switching speed
• Low profile low inductance SMD-10 Package
• Separated control & Power-connections for easy
paralleling
• Good coplanarity
• Easy solder inspection and cleaning
n-channel
G
E(k)
Benefits
• Highest power density and efficiency available
• HEXFRED Diodes optimized for performance with
IGBTs. Minimized recovery characteristics
• IGBTs optimized for specific application conditions
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
t_sc
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Surface Mountable
Short Circuit Rated
UltraFast IGBT
C
V_CES = 600V
V_{CE(ON)typ =} 1.75V
@V_GE = 15V, I_C = 60A
E
Max.
600
100
60
200
200
50
200
10
± 20
350
140
-55 to +150
Units
V
A
µs
V
W
°C
Thermal Resistance
R_θJC
R_θJC
R_θCS
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.44
6.0(0.21)
Max.
0.36
0.69
–––
–––
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
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Units
°C/W
g (oz)
1