IRG4RC20F Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)

PD - 91731A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC20F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation IGBTs.
• Industry standard TO-252AA package
• Combines very low V_CE(on) with low switching
losses
C
G
E
N-channel
V_CES = 600V
V_{CE(on) typ.} = 1.82V
@V_GE = 15V, I_C = 12A
Benefits
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R_θJC
R_θJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
D-Pak
TO-252AA
Max.
600
22
12
44
44
± 20
5.0
66
26
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
0.3 (0.01)
Max.
1.9
50
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
2/22/01