IRG4RC10KD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V_GE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED^TM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V_CES = 600V
V_{CE(on) typ.} = 2.39V
@V_GE = 15V, I_C = 5.0A
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED^TM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 100°C
I_FM
t_sc
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
D-PAK
TO-252AA
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
R_θJC
R_θJC
R_θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
–––
0.3 (0.01)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
7.0
50
–––
Units
V
A
µs
V
W
°C
Units
°C/W
g (oz)
1
12/30/00