IRG4RC10K Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

PD 91735A
IRG4RC10K
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, V_GE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-252AA package
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 2.39V
@V_GE = 15V, I_C = 5.0A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
t_sc
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load CurrentR
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
D-PAK
TO-252AA
Max.
600
9.0
5.0
18
18
10
± 20
34
38
15
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R_θJC
R_θJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
0.3 (0.01)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
50
–––
Units
°C/W
g (oz)
1
12/30/00