IRG4PSH71U Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 91685
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSH71U
UltraFast Speed IGBT
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
C
G
E
n-channel
V_CES = 1200V
V_{CE(on) typ.} = 2.50V
@V_GE = 15V, I_C = 50A
SUPER - 247
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
Ù Pulse Collector Current
d Clamped Inductive Load current
V_GE
E_ARV
g ^{Gate-to-Emitter Voltage}
Reverse Voltage Avalanche Energy
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Wt
Weight
www.irf.com
Max.
1200
99
50
200
200
±20
150
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Min.
–––
–––
–––
20 (2.0)
–––
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
1
5/24/04