IRG4PSC71K Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)

PD - 91683A
PRELIMINARY
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71K
Short Circuit Rated
UltraFast IGBT
Features
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High abort circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
C
G
E
n-channel
V_CES = 600V
V_{CE(on) typ.} = 1.83V
@V_GE = 15V, I_C = 60A
Benefits
• Highest current rating IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
t_SC
V_GE
E_ARV
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Ž
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance\ Mechanical
R_θJC
R_θCS
R_θJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
SUPER - 247
Max.
600
85†
60
200
200
10
± 20
180
350
140
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
µs
V
mJ
W
°C
Min.
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/11/99