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IRG4PH50UD Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) | |||
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PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
⢠UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
⢠New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
⢠IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
bridge configurations
⢠Industry standard TO-247AC package
Benefits
⢠Higher switching frequency capability than
competitive IGBTs
⢠Highest efficiency available
⢠HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
45
24
180
180
16
180
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfâ¢in (1.1Nâ¢m)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
6 (0.21)
Max.
0.64
0.83
âââ
40
âââ
Units
°C/W
g (oz)
1
7/7/2000
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