IRG4PH50S-EPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD -96225
IRG4PH50S-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
V_CES =1200V
V_{CE(on) typ.} = 1.47V
@V_GE = 15V, I_C = 33A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
V_CES
I_C@ T_C = 25°C
I_C@ T_C = 100°C
I_CM
I_LM
V_GE
E_ARV
P_D @ T_C =25°
P_D @ T_C =100°
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
c Pulsed Collector Current
d Clamped Inductive Load Current
Gate-to-Emitter Voltage
e ^{Transient Gate-to-Emitter Voltage}
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
C
GC ^E
TO-247AD
IRG4PH50S-EPbF
Max.
1200
57
33
114
114
± 20
± 30
270
200
80
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.24
—
6.0(0.21)
Max.
0.64
—
40
—
Units
°C/W
g (oz)
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1
02/09/09